【摘要】 利用原子层淀积工艺制备了9 nm厚的铪锆氧(Hf_0.5Zr_0.5O₂)铁电薄膜。通过淀积TiN顶/底电极形成Hf_0.5Zr_0.5O₂铁电电容,研究退火工艺和机械夹持工艺对铁电电容性能的影响。实验结果表明,极化强度-电压曲线为电滞回线形,双倍剩余极化强度达31.7μC/cm²,矫顽电压约为1.6 V,电学性能明显提高。在150℃高温下,Hf_0.5Zr_0.5O₂基铁电电容器的电学性能仍然良好,证明了退火工艺和机械夹持工艺对电学性能的优化作用。更多还原

【Abstract】 A 9 nm thick ferroelectric thin film of hafnium zirconium oxide(Hf_0.5Zr_0.5O₂) was prepared by atomic layer deposition. The Hf_0.5Zr_0.5O₂ ferroelectric capacitor also incorporated the TiN top/bottom electrodes. The effects of annealing process and mechanical clamping process on the characteristics of ferroelectric capacitors were investigated. Experimental results showed that the polarization strength-voltage curve was hysteresis loop. The double remnant polarization was 31.7 μC/cm² with a coercive voltage of about 1.6 V, and the electrical performance was obviously improved. The ferroelectric capacitors worked very well even at the high temperature of 150 ℃. It was proved that annealing process and mechanical clamping process could optimize the electrical properties of Hf_0.5Zr_0.5O₂ ferroelectric capacitors.更多还原