【摘要】 以光催化还原CO₂为出发点,介绍了石墨相氮化碳（g-C₃N₄）形貌调控、元素掺杂、p型半导体与g-C₃N₄形成p-n异质结等方法改性g-C₃N₄。相比较体相g-C₃N₄,改性后的g-C₃N₄具有更多的反应活性位点,能够显著降低光生电子空穴的复合几率,提高光催化还原CO₂性能。给出了可能的反应机理,对未来g-C₃N₄基催化剂还原CO₂的前景进行了展望。更多还原

【Abstract】 To improve the photocatalytic reduction of CO₂, the modifications of graphite phase carbon nitride（g-C₃N₄） morphology regulation, element doping, forming a p-n heterojunction with p-type semiconductor were introduced. Compared with the bulk phase g-C₃N₄, the modified g-C₃N₄ features more active sites, which can significantly reduce the recombination probability of photogenerated elec-tron holes and improve the photocatalytic reduction of CO₂ performance. Based on the previous research, the possible reaction mechanism was given, and the potential applications of photocatalytic reduction of CO₂ by g-C₃N₄ based catalyst were demonstrated.更多还原