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含金属锡铟的导电银厚膜的抗氧化机理研究

Study on the anti-oxidation mechanism of electric conducting silver thick film containing metals indium and tin

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【作者】 程萍王大志李天鹞闻心怡刘建国彭晓钧

【Author】 CHENG Ping;WANG Dazhi;LI Tianyao;WEN Xinyi;LIU Jianguo;PENG Xiaojun;Wuhan Second Ship Design Research Institute;Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology;

【通讯作者】 刘建国;

【机构】 武汉第二船舶设计研究所华中科技大学武汉光电国家研究中心

【摘要】 通过在导电银电子浆料中添加适量的金属锡铟粉末,得到一种新的抗氧化银浆,并采用丝网印刷技术制备银厚膜.探讨了厚膜在自然时效氧化和硫化氢气氛中硫化氧化的过程及机理,采用扫描电子显微镜(SEM)、能谱(EDS)和X射线衍射(XRD)对银厚膜表面的微观形貌和元素成分进行分析.结果表明,含金属锡铟的银厚膜比纯银厚膜具有更好的抗氧化性.热力学分析表明,添加的金属锡铟与氧气、硫化氢反应的Gibbs自由能比纯银的小,更易在厚膜的晶界/孔洞缺陷处发生氧化反应,延缓银的氧化,从而提高银厚膜抗氧化能力.

【Abstract】 A novel anti-oxidation silver paste was prepared by adding an appropriate amount of tin and indium metallic powders into the conventional silver electronic paste. The silver thick film was obtained using screen printing technique. The phenomena and mechanism of the acceleration vulcanization and spontaneous aging oxidation of the silver thick film were explored in hydrogen sulfide atmosphere and in ambient atmosphere. The thick film’s surface micro-morphology and element composition were observed by scanning electron microscopy(SEM), energy dispersive spectrometry(EDS), and X-ray diffraction(XRD). The silver thick film containing metals tin and indium possessed better anti-oxidation than pure silver thick film. Thermodynamics analysis revealed that the Gibbs free energies of the reaction of tin and indium with oxygen and hydrogen sulfide were lower than that of the silver. Thus, tin and indium were easier to be oxidized and vulcanized in the grain boundary, and the anti-oxidation of the silver thick film containing metals tin and indium was improved.

【基金】 国家自然科学基金面上项目(51473058);武汉市应用基础研究计划(WH232816)
  • 【分类号】TQ131.22
  • 【下载频次】86
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