【摘要】 本文以4,4’-二氨基二苯醚、均苯四甲酸二酐为原料,制备聚酰亚胺(Polyimide,PI)薄膜。并将其与笼型倍半硅氧烷(Polyhedral oligomeric silsesquioxane,POSS),通过原位分散聚合法制备了具有低介电常数POSS/PI复合薄膜。研究了POSS填充量对POSS/PI复合材料介电、热稳定性及力学性能的影响。结果表明:掺入POSS的含量为0.5wt%时,POSS/PI复合材料的介电常数与介电损耗明显降低,热分解温度变化不大,拉伸强度略有降低。更多还原

【Abstract】 4,4’-oxybisbenzenamine(ODA) and pyromellitic dianhydride(PMDA) were used as monomers to synthesis PI films. Then polyhedral oligomeric silsesquioxane(POSS)/PI compositeslow dielectric constant were preparedby introducing POSS nanofillers into PI suing in situ polymerization method. The effects of POSS loading onthe dielectric, thermal stabilities and mechanical properties of the POSS/PI composites were studied.The results showed thatboth the dielectric constant and dielectric loss of the POSS/PI composites were decreased by adding proper content of POSS. However, the thermal decomposition temperature was not changed obviously and the tensile strength was slightly decreased.更多还原