【摘要】 本文设计了一种磷光顶发射结构制备单色高亮绿光OLED微型显示器件,器件结构为:ITO/2-TNATA/NPB/MCP:Ir（ppy）₃/Bphen/LiF/Mg:Ag。为获得低功耗、高亮度的绿光OLED微型显示器件,采用开口率大、益于集成的顶发射结构器件,并对发光层掺杂机制进行实验研究,通过改变掺杂比例获得较佳的器件性能。研究表明,在掺杂比分别为1.0%、1.5%、1.8%、2.0%、2.3%、2.5%的绿光OLED器件中,2.0%的掺杂器件较其他比例的性能更优,通过进一步优化掺杂研究显示,发光层主体材料MCP与掺杂料Ir（ppy）₃的最佳掺杂比例为1:0.02,主体材料薄膜厚度为250?。在20 mA/cm²的电流密度下,得到器件电压为3.62 V,亮度为4622 cd/cm²,色坐标（X,Y）为（0.33,0.61）。更多还原

【Abstract】 A monochrome high brightness green top emission OLED micro-displays is designed by the phosphor emitting structure: ITO/2-TNATA/NPB/MCP:Ir（ppy）₃/Bphen/LiF/Mg:Ag. The top emitting structure device with large aperture ratio and easy to integrate was prepared, exhibiting performance of low-power and high brightness. The best performance is obtained by changing the doping ratio in the luminous layer. The results showed that the 2.0% of the doped ratio is better than other ratios such as 1.0%, 1.5%, 1.8%, 2.3%, 2.5% in the green OLED micro-displays. Doped ratio is further optimized, and the best rate of the host materials MCP and doped material Ir（ppy）₃ is 1:0.02, the film thickness of host material is 250 ?. When current density is 20 m A/cm², voltage is 3.62 V, the brightness is 4622 cd/cm², chromaticity coordinates（CIE X, Y）（0.33, 0.61）.更多还原