【摘要】 利用质子、中子和伽马射线辐照空间激光通信系统拟选用的高速InGaAs-PIN光电二极管,对其辐射损伤效应开展研究,以评估PIN光电器件在空间辐射环境中的适用性。基于辐照前后器件的暗电流、光电流、光谱响应、电容等参数随辐照剂量变化的测试数据,对各参数受辐照影响的程度和不同辐照模拟源对光电器件造成的辐射损伤差异进行了比较分析。结果表明:PIN光电二极管的暗电流是受辐照影响最严重的参数,而光电流、光谱响应、电容等参数受辐照影响较小;暗电流增加主要与质子和中子辐照引入的非辐射复合中心有关,并与位移损伤剂量基本成线性关系。更多还原

【Abstract】 To assess the space radiation adaptability of the PIN optoelectronic devices, the InGaAs-PIN photodiodes as the candidate devices for the space laser communication system are irradiated by the proton,neutron, and gamma ray for evaluating their susceptibility to the space radiation environment. The performance of the devices characterized by the dark current, the optical output, the spectral response, and the capacitance are measured before and after the irradiation from three kinds of sources, to compare the radiation damages to the optoelectronic devices among different parameters and with respect to different radiation sources. It is indicated that the dark current of the PIN diodes is the most susceptible factor, while on the optical current, the spectral response and the capacitance, only little influence is observed. The increases of the dark current can be attributed to the introduction of non-radiation recombination centers induced by the proton and neutron irradiations, which has basically a linear relationship with the displacement damage dose.更多还原