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Passively Q-switched self-frequency doubling Nd3+:ReCa4O(BO33(Re=Y,Gd) lasers with tin diselenide as a saturable absorber

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【作者】 孙玉祥王梦霞王新乐周莹王波王正平于法鹏许心光

【Author】 Yuxiang Sun;Mengxia Wang;Xinle Wang;Ying Zhou;Bo Wang;Zhengping Wang;Fapeng Yu;Xinguang Xu;State Key Laboratory of Crystal Materials, Shandong University;Key Laboratory of Functional Crystal Materials and Device (Shandong University), Ministry of Education;

【通讯作者】 王正平;于法鹏;

【机构】 State Key Laboratory of Crystal Materials, Shandong UniversityKey Laboratory of Functional Crystal Materials and Device (Shandong University), Ministry of Education

【摘要】 With tin diselenide(SnSe2) film as a saturable absorber(SA), the passively Q-switched self-frequency doubling(SFD) lasers were realized in Nd3+:ReCa4O(BO33(Re = Y, Gd) crystals. For Nd:YCa4O(BO33 crystal, the maximum average output power at 532 nm was 19.6 mW, and the corresponding pulse repetition frequency, pulse duration, single pulse energy, and peak power were 17.6 kHz, 91.9 ns, 1.1 μJ, and 12.1 W, respectively. For Nd:GdCa4 O(BO33 crystal, these values were 14.5 mW, 22.1 kHz, 48.7 ns, 0.66 μJ, and 13.5 W.

【Abstract】 With tin diselenide(SnSe2) film as a saturable absorber(SA), the passively Q-switched self-frequency doubling(SFD) lasers were realized in Nd3+:ReCa4O(BO33(Re = Y, Gd) crystals. For Nd:YCa4O(BO33 crystal, the maximum average output power at 532 nm was 19.6 mW, and the corresponding pulse repetition frequency, pulse duration, single pulse energy, and peak power were 17.6 kHz, 91.9 ns, 1.1 μJ, and 12.1 W, respectively. For Nd:GdCa4 O(BO33 crystal, these values were 14.5 mW, 22.1 kHz, 48.7 ns, 0.66 μJ, and 13.5 W.

【关键词】 switchedabsorberBO3Re=YGdReCa4Odoublingrepetitionresonatormirrorinterlayer
【基金】 supported by the Natural Science Foundation of Shandong Province(No.ZR2017MF031)
  • 【文献出处】 Chinese Optics Letters ,中国光学快报(英文版) , 编辑部邮箱 ,2019年06期
  • 【分类号】TN248
  • 【下载频次】21
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