【摘要】 设计了一款低功耗带隙基准,通过引入在温度超过某一温度之后的渐变阻抗,改善了带隙基准的温漂值,同时对传统的带有运放的带隙做出了改进,设计了一款低功耗的结构。仿真结果表明,在电源5 V供电情况下,总体功耗为1.2μW,在温度范围-40℃～150℃,温漂为6.40 ppm/℃。更多还原

【Abstract】 This paper proposed an innovative CMOS bandgap reference with both low current consumption and high precision over a wide temperature range. The proposed bandgap reference was designed using a standard 0. 18 μm CMOS technology. The high precision method can make impedance varied with temperature. While the temperature is rising, the increased impedance can compensate the nonlinear of V_be. And by improving the structure of conservative bandgap reference, current consumption was extremely shrunk. Measured results have shown the temperature coefficient is 6. 4 ppm/℃ over a wide range of -40 ℃ ～ 150 ℃. The total power consumption is 1. 2 μW while the voltage supply is 5 V.更多还原