【摘要】 背封技术可以有效防止硅外延过程中造成的自掺杂现象。讨论了APCVD制备二氧化硅膜工艺中膜厚、淀积温度和O₂与SiH₄比例等关系,分析了膜厚均匀性的影响因素和膜表面质量,提出了SiO₂膜淀积的工艺条件及背封前清洗方法。更多还原

【Abstract】 Back-seal technology can effectively prevent the autodoping effect in epitaxial process. The relationship among the thickness of SiO₂ film, deposition temperature and the ratio of O₂ to SiH₄ in the process of preparing SiO₂ film is discussed by APCVD. The factors affecting the uniformity of the film thickness and the surface quality of the film are analyzed. The technological conditions for deposition of SiO₂ film and the cleaning methods before back-sealing is put forward.更多还原