【摘要】 介绍了微波高增益低噪声晶体管的设计原理,分析了器件特征频率、增益、噪声及可靠性在设计时应考虑的因素。基于自主开发的工艺平台,成功研制了一款工作于UHF频段的高增益低噪声晶体管。该器件工作电压8 V,连线波工作条件下,特征频率达到8 GHz,在0. 5～2 GHz频带内1 dB压缩增益大于13 d B,噪声系数小于2. 0 d B,表现出良好的微波性能。经过长期使用,器件性能稳定,实现了器件国产化及工程应用的突破。更多还原

【Abstract】 The design principles of the Microwave High Gain Low-noise transistor devices were introduced. The factors that should be considered in the design of some key parameters were analyzed,such as the characteristic frequency,the gain,the noise and the reliability of device. Based on the self-developing process platform,a high gain Low-noise transistor operating at ultra high frequency( UHF) was successfully researched and fabricated. Under operating conditions of VCE= 8 V,continuous wave,the characteristic frequency of the device reaches 8 GHZ,the device can deliver the 1 d B compression gain of more than 13 dB and less than 2. 0 dB of noise figure in the frequency range of 0. 5 ～ 2 GHz. The good microwave performances are presented. Through long-term use,the device is qualified with stabilization. The device achieves a breakthrough in the engineering application of domestic.更多还原