【摘要】 铜箔上的杂质在化学气相沉积法(CVD)制备石墨烯的过程中会形成氧化物颗粒,导致所制得的石墨烯质量降低。为解决这一问题,可以在CVD生长石墨烯之前对铜箔表面进行预处理来去除铜箔表面杂质并降低铜箔粗糙度。本研究使用过硫酸铵溶液和稀醋酸溶液分别对铜箔表面进行轻微刻蚀,以此作为预处理手段,研究其对CVD生长制备石墨烯的影响,并对铜箔和石墨烯使用拉曼光谱和霍尔效应测试等方法进行表征。研究发现这一化学预处理可以有效去除铜箔表面杂质,从而使制备得到的石墨烯电学性能得到改善,质量显著提高。更多还原

【Abstract】 The small amount of the impurities in copper foil would form oxide particles on the surface during chemical vapor deposition(CVD) for graphene growth, leading to quality degradation of the obtained graphene. To solve this problem, a surface treatment process was proposed to effectively remove the impurities and decrease the surface roughness of the copper foil in advance before CVD growth. In this work, acetic acid and ammonium persulfate(APS) solutions were used, respectively, to slightly etch the surface of copper foil, which was then employed as the catalyst substrate to grow graphene. The detailed characterizations including Raman spectrometer atomic force microscope and Hall effect measurement were carried out to systematically study the morphologies and properties of the samples. The results indicate that the impurities on the copper surface could be completely removed by chemical pretreatment, resulting in the increase of carrier mobility and the decrease of sheet resistance of graphene films after the CVD process.更多还原