【摘要】 利用Silvaco-TCAD软件对N型HIBC晶硅太阳电池的输出特性进行模拟仿真,分析发射结宽度、背表面场宽度、隔离层宽度等背面结构参数对HIBC太阳电池短路电流、开路电压、填充因子、转换效率的影响。HIBC电池背面结构优化参数为:背面本征非晶硅薄膜厚度3 nm、P型发射结宽度700μm、背表面场宽度100μm、p-a-Si掺杂浓度1×10¹⁹cm^-3;n-a-Si掺杂浓度5×10¹⁹cm^-3。更多还原

【Abstract】 In this work,the effects of backside structural parameters as emitter width, back surface electric field width and isolation layer width on the HIBC crystalline silicon solar cell output properties were simulated by Silvaco-TCAD semiconductor device simulation software.The influences of backside structural parameters on HIBC solar cell’s short-circuit current, open-circuit voltage, fill factor and conversion efficiency were analyzed comprehensively. The optimization parameters of HIBC solar cell’s backside structure are as follows: the thickness of the backside intrinsic amorphous silicon film is 3 nm, the P type emitter junction width is 700 μm, the backside surface electric field width is 100 μm, the p-a-Si doping concentration is 1×10¹⁹ cm^-3, and n-a-Si doping concentration is 5×10¹⁹ cm^-3.更多还原