【摘要】 针对多孔硅气敏传感器在室温下对NO₂气体灵敏度较低、选择性不强的问题,采用双槽电化学腐蚀法制备多孔硅,然后在多孔硅顶部溅射沉积金属钨薄膜并经高温热处理氧化形成WO₃纳米线,制备出WO₃纳米线修饰多孔硅结构及其气敏传感器。对WO₃纳米线/多孔硅材料进行了SEM和XRD分析,测试了传感器室温下对NO₂的气敏特性。结果表明,制备WO₃纳米线的最佳热处理条件是700℃,此温度下增加金属钨膜溅射时间可提升WO₃纳米线的生长密度。所制备的传感器对NO₂气体表现出反型气敏响应,特别是溅射1 min金属钨的样品显示出优异的NO₂室温探测能力与选择性,对4×10^-6 NO₂的气敏灵敏度是单纯多孔硅样品的5.8倍。更多还原

【Abstract】 Porous silicon modified with WO₃ nanowires（ WO₃/PS） was prepared to improve room temperature NO₂ sensing properties of porous silicon. Porous silicon was fabricated by double-cell electrochemical etching. WO₃ nanowires/porous silicon was prepared by thermal oxidation of W thin film sputtered on porous silicon. SEM and XRD were employed to characterize morphology and composition. NO₂ gas sensing properties were analysed at room temperature. Results indicated that the optimum heating temperature of WO₃ nanowires preparation is 700 ℃,and on this condition,WO₃ nanowires intensity increases with extended sputtering time. Prepared WO₃ nanowires/porous silicon exhibits inversion response to NO₂. Among the prepared samples. 1 min W thin film sputtered sample has best NO₂ sensing properties,that selectivity to NO₂ is improved significantly and sensitivity to 4 × 10^-6 NO₂ is improved by 4.8 times than porous silicon.更多还原