【摘要】 采用TSMC 90 nm CMOS工艺,设计并实现了一款具有移相功能的K波段双通道集成发射前端芯片.该芯片主要由一个功率分配器、两组参数不同的有源移相器和功率放大器构成,同时在片上集成了用于控制移相器的数字模块.测试结果表明,在中心频点25 GHz处,两个通道的增益分别为19.1 dB和18.9 dB,输出1 dB压缩点分别为9.57 dBm和8.41 dBm,相位误差分别为1.38°和1.47°,供电电压为1.2 V,总功耗为0.32 W,芯片总面积为2.2 mm×1.25 mm.更多还原

【Abstract】 A front-end chip with phase shift function was designed for K-band two-channel integrated transmitter and implemented in TSMC 90 nm CMOS technology. The chip consists of a power divider, two sets of active phase shifters and power amplifiers with different parameters. And a digital block was integrated on the chip to control phase shifters. Measurement results show that, at the center frequency 25 GHz, the gains of two channels are 19.1 dB and 18.9 dB, the output power 1 dB compression points of two channels are 9.57 dBm and 8.41 dBm, and the phase errors of two channels are 1.38° and 1.47° respectively. The power consumption is 0.32 W when the supply voltage is 1.2 V. The total chip area occupies 2.20 mm×1.25 mm.更多还原