【摘要】 本文使用射频磁控溅射法,采用双靶磁控溅射系统,通过Ga₂O₃和Mg O两个靶位交替溅射的方法实现不同浓度Mg掺杂氧化镓薄膜的制备。结果发现随着Mg掺杂浓度的增加,薄膜的厚度逐渐减小且薄膜的结晶质量有所下降,光透过率无明显变化,但带隙宽度逐渐增加,可实现Ga₂O₃薄膜带隙宽度的连续可调,可调范围从4.96eV到5.21eV;光致发光光谱实验结果表明Mg的掺杂导致PL峰值发生蓝移现象,且在473nm附近出现一个新的发光峰。更多还原

【Abstract】 Radio frequency magnetron sputtering was used to deposit Mg doped Gallium oxide（Ga₂O₃） thin films with different Mg concentrations by alternate sputtering of Ga₂O₃ and MgO targets. The results showed that with the increase of Mg concentration,the crystallinity of the films decreased and the thickness of the films reduced; the light transmittance had no obvious change, but the band gap increased gradually, so we can change the band gap width of Ga₂O₃ film continuously by doping Mg into Ga₂O₃ film rangeing from 4.96 eV to 5.21 eV; The PL spectroscopy results show that the doping of Mg leads to a blue shift of the PL peak,and a new luminescence peak appears near the 473 nm blue light.更多还原