【摘要】 利用直流磁控溅射方法低温沉积了氢掺杂AZO（H-AZO）薄膜,研究了不同退火温度下H-AZO薄膜的电学、结构和光学性能的变化。结果表明,300℃退火时,H-AZO薄膜的电阻率和光学带隙不变。而400℃退火时,薄膜电阻由4.7×10^-4升高到1.43×10^-3Ω·cm,并且光学带隙减小。由于300℃退火时H-AZO薄膜的热稳定性好,将其用作低温制备薄膜太阳电池的透明导电膜具有很好的发展潜力。更多还原

【Abstract】 The hydrogen and aluminum co-doped zinc oxide（ H-AZO） thin films were deposited by DC magnetron sputtering at low temperature.The influence of the annealing temperature in low vacuum on the thermal stability of electrical and optical properties was investigated with X-ray diffraction,spectrophotometry and Hall-effect measurement.The results show that annealing at a temperature over 300℃ negatively affected the thermal stability of H-AZO coatings.For example,as the annealing temperature increased from 300℃ up to 400℃,the electrical resistivity significantly increased from 4.7 × 10^-4 to 1. 43 × 10^-3Ω·cm,accompanied by a reduction of the optical band gap,possibly because of increasing escape of hydrogen in the H-AZO coatings.We suggest that the H-AZO coatings,annealed at 300℃,be a good transparent conducting oxide layer for thin film solar cells.更多还原