【摘要】 采用磁控溅射,通过氧氩比的调制在玻璃衬底上沉积了单斜结构的Cu O薄膜,并重点研究了氧氩比对薄膜微结构及光学吸收边的影响。研究表明随着氧氩比的增加,薄膜逐渐从多相向单相转变,薄膜表面逐渐趋于光滑和平整,Cu O<-111>择优取向逐渐减弱。晶轴上的晶格畸变结果显示氧氩比对晶轴a,b和c的影响不尽相同。a,b轴上呈现的压应力均先明显增大然后变得稳定,而c轴上则呈现了压应力向拉应力的转变。氧氩比对晶格常数的影响反应了a,b和c轴上晶粒生长的各向异性。Cu O薄膜为直接带隙半导体,其1.9 e V附近的光学吸收边随着氧氩比的增加而略微蓝移,吸收边的蓝移归结于晶粒的量子尺寸效应。更多还原

【Abstract】 The monoclinic CuO films were deposited by magnetron sputtering on glass substrate.The effect of the O₂/Ar ratio on the microstructures and optical properties was investigated with X-ray diffraction,scanning electron microscopy and spectrophotometer.The results show that the O₂/Ar ratio had a major impact.To be specific,as the O₂/Ar ratio increased,the poly-to mono-crystalline transition occurred,accompanied by a decrease of the <-111> preferential growth orientation; the CuO coatings,grown in anisotropic manner,became increasingly compact and smooth; the compressive stress along a-and b-axis changed in an increase-leveloff mode,while the compressive stress transited into tensile stress in c-axis; a slight blue-shift of the optical absorption edge near 1.9 e V of the direct-gap CuO semiconductor showed up,possibly because of quantum size effect of CuO grains.更多还原