【摘要】 如何简单、快速且低成本制备穿通导线一直是基于玻璃通孔的微机械传感器晶圆级真空封装的技术难点。根据电化学反应理论,设计了一种有掩膜电镀的穿通导线制备方法。采用纳秒激光烧灼得到玻璃通孔,利用掩膜增大电镀时通孔周围的电流密度,实现了任意尺寸玻璃通孔的快速金属填充。实验分析确定300?m厚的玻璃最优通孔直径为100?m,通孔间的电阻均约为0.347?,最大误差为2.59%。通过沿通孔划片得到的扫描电子显微镜下图像可以看出,金属填充致密均匀,形貌良好。更多还原

【Abstract】 The simple, rapid and low-cost preparation of the through wire is a technical difficulty for the wafer level vacuum packaging of MEMS sensor based on through-glass-via(TGA). A preparation method of the through wire with masked plating is designed based on electrochemical reaction theory. The ablated TGA is obtained by nanosecond laser burning, and the current density around the TGA is increased by the mask, which realizes the rapid metal filling of the TGA with any size. Experimental results show that the optimum TGA diameter is 100 ?m for 300 ?m thick glass. The resistances between the TGAs are all about 0.347 ? and have a maximum error of 2.59%. It can be seen from the scanning electron microscope image obtained by cutting along the TGA that the metal filling has compact uniform and good morphology.更多还原