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稀土元素Er掺杂AlN的压电性能

The Piezoelectric Properties of AlN Doped With Rare-Earth Element Er

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【作者】 泰智薇杨成韬胡现伟谢易微

【Author】 TAI Zhiwei;YANG Chengtao;HU Xianwei;XIE Yiwei;State Key Lab.of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China;

【通讯作者】 杨成韬;

【机构】 电子科技大学电子薄膜与集成器件国家重点实验室

【摘要】 采用第一性原理密度泛函理论法研究了纤锌矿结构AlN中掺杂不同含量Er后的晶体结构和压电性能。计算结果表明,随着掺杂Er原子数比x由0增加到25%,ErxAl1-xN晶体的晶胞参数、晶胞体积和键长显著增大,压电性能得到提升。当x=25%时,ErxAl1-xN体系的压电常数d33为8.67pC/N,比纯AlN提高了79.5%,为未来AlN压电薄膜材料研究领域提供了更多可选材料。

【Abstract】 The crystal structure and piezoelectric properties of wurtzite AlN doped with different contents of Er were studied by using the first-principles density functional theory in this paper.The calculation results show that ErxAl1-xN crystal cell parameters,crystal cell volume and bond length of the ErxAl1-xN crystalin crease significantly with the increase of the number of doped Er atoms from 0 to 25%,and the piezoelectric properties are also improved.When x = 25%,the piezoelectric constant d33 of ErxAl1-xN system is 8.67 pC/N,which is 79.5% higher than that of the pure AlN.The Er-doped AlN provide us an alternative material for piezoelectric thin film in the future.

【基金】 中央高校基本科研业务费专项资金资助项目(ZYGX2013Z001)
  • 【文献出处】 压电与声光 ,Piezoelectrics & Acoustooptics , 编辑部邮箱 ,2018年06期
  • 【分类号】TN304
  • 【被引频次】3
  • 【下载频次】207
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