【摘要】 采用多级射频放大电路以及高压脉冲调制技术,实现了S波段高增益小型化200 W功率模块的研制。驱动放大电路采用Ga As功率单片进行功率合成;末级放大电路依托栅长(0.5μm)Ga N高电子迁移率晶体管(HEMT)芯片,选取多子胞结构来改善热分布,通过内匹配技术设计完成了双胞总栅宽24 mm Ga N芯片的匹配网络,并设计高压脉冲调制电路提供电源,成功研制出了小型化的S波段200 W内匹配Ga N功率模块。测试得出该模块实现了在输入功率10 d Bm,栅极电压-5 V,漏极电压32 V,TTL调制信号输入条件下,输出频率在3.1~3.5 GHz处,输出功率大于200 W,功率附加效率(PAE)大于55%。模块实际尺寸为2.4 mm×38 mm×5.5 mm。更多还原

【Abstract】 By using multistage RF amplifier circuit and the high voltage pulse modulation technology, the high gain S-band miniaturized 200 W Ga N power amplifier module is successfully fabricated. The drive amplifier circuit adopts Ga As power chip for power combining. The last stage amplifier circuit is based on the gate-length(0.5 μm) Ga N High Electron Mobility Transistor(HEMT) chip, and the heat distribution is improved by means of the multi-sub-cell structure. Through the internal matching, the matching network of two cells of 24 mm gate width Ga N device is successfully designed, so is the high voltage pulse modulation circuit. The test results show that under the input power of 10 d Bm, the gate voltage of-5 V, the drain voltage of 32 V, and TTL modulated signal, the output frequency is in the range of 3.1-3.5 GHz, the output power is above 200 W, and the Power Additional Efficiency(PAE) is more than 55%. The module size is 2.4 mm×38 mm×5.5 mm.更多还原