【摘要】 本文制备了一种基于局部化学掺杂的单壁碳纳米管(SWCNT) p-i-n结二极管。在此器件中,单根SWCNT沟道的两端分别被掺杂成p型和n型,沟道中段保留为本征状态,从而在SWCNT中形成具有较强内建电场的p-i-n结,表现出二极管特性。所制二极管器件具有高的器件性能,其整流比可达10~3数量级、反向饱和电流仅为23 p A。此外,简要探讨了该结构二极管的工作原理。更多还原

【Abstract】 Carbon nanotube p-n junction diodes are expected to be the building block of next generation integrated circuits.A p-in junction diode was prepared from a SWCNT with one end p-type doped,the other end n-type doped and the middle segment undoped.The p-type doping was performed using triethyloxonium hexachloroantimonate to form an air stable charge transfer complex（SWCNT⁺-SbCl₆^-）while polyethylene imine was used as an electron donor for the n-type doping.The device showed an excellent performance with a high rectification ratio of 10³and a low reverse saturation current of 23 p A.更多还原