【摘要】 采用磁控溅射法以高纯石墨为靶材在单晶硅(100)上制备了石墨薄膜,通过SEM扫描表征其表面形貌以及截面厚度,利用XRD对石墨薄膜的晶体结构进行分析,再运用Keithley 2400对器件的I-V曲线进行测试.研究发现,通过磁控溅射得到的Si/C/Ag结构的器件具有明显的双极电阻开关效应,在一开始时,电阻开关比可以达到105倍,继续扫描直至曲线达到稳定状态后的比值也在103左右.这种显著的电阻开关特性经过研究被认为是石墨在溅射过程中形成稳定的缺陷对载流子的俘获和释放,使得器件的电阻突变而导致的.更多还原

【Abstract】 In this experiment,C thin films has been prepared by magnetron sputtering.The target material is higher than 99.99% of the purity of graphite.The surface morphology and thickness of the films were scanned by SEM,the thickness of the thin film is about 180 nm,and the surface is smooth.Keithley 2400 to test the I-V curve of the device,it has been found that Si/C/Ag device structure obtained by magnetron sputtering with bipolar resistance switching effect obviously.At the very beginning,the resistance ratio of the off state and the closed state is 100 000 times,after multiple scans,the stability of the ratio is about thousand times.The resistive switching characteristics of this significant study is believed to be defect caused by the formation of graphite in the sputtering process leads to the trapping and releasing of the carriers,so the device appears the result of resistance mutation.更多还原