【摘要】 本文介绍了一种用CMOS工艺实现的对温度和电源电压变化不敏感的片上张弛振荡器.文中提出了一种降低张弛振荡器频率波动的补偿技术,该技术克服了传统补偿方法受到片上电阻温度特性制约的缺点,极大地提高了振荡器输出频率的稳定性.测试结果表明,当电源电压从1.62 V变化到1.98 V时,振荡器输出频率变化±0.11%;当温度从40℃变化到125℃时,输出频率变化±0.24%.相比于传统方法,频率波动降低了大约2/3.该振荡器采用TSMC 180nm 1P5M工艺实现,电源电压为1.8V.当工作在25 MHz时,功耗为50μW.更多还原

【Abstract】 A temperature and supply independent on-chip relaxation oscillator is introduced.This paper proposed a technique to reduce frequency variation of relaxation oscillator.This technique overcomes the disadvantages of traditional compensation methods, which are restricted by on-chip resistance temperature characteristics.Experimental results show that the oscillator exhibits frequency variation of±0.11%for supply ranging from 1.62 V to 1.98 V and ±0.24% for temperature ranging from 40℃ to 125℃.Compared to conventional methods,frequency variation of this oscillator is reduced by 2/3.This oscillator is designed in TSMC 180-nm 1 P5 M CMOS process with a supply voltage of 1.8 Vand consumes 50μW when operating at 25 MHz.更多还原