In recent years, new optoelectronic materials such as GaN-based thin-film semiconductors and rare-earth-ion doped luminescent materials have aroused the interest of many researchers. The GaN-based semiconductors have wide and direct energy gaps which could be adjusted to cover the whole visible light spectrum region by doping. They have been successfully applied to fabrications of blue lasers and light emitting diodes. The rare-earth-ion doped luminescent materials have exhibited many advantages in luminesc...
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