The influences of hydrogen impurities on the performances of indium-gallium-zinc oxide(IGZO) thin film transistors(TFT) are summarized in this article. Firstly, the sources of hydrogen impurities in the IGZO channels of the TFTs are proposed, which could originate from the residual gas in the deposition chamber, the molecules absorbed on the sputtering target surface, the neighbor films that contain abundant hydrogen elements, doping during annealing processes, etc. The hydrogen impurities in the IGZO films...
| 
推荐 
点击下列相关研究机构和相关文献作者，可以直接查到这些机构和作者被《中国知识资源总库》收录的其它文献，使您全面了解该机构和该作者的研究动态和历史。
