The inversion layer mobility of small-sized uniaxial strained Si p-channel metal oxide semiconductor(PMOS) channel is closely related to the crystal plane and crystal orientation. When optimally designing the strained PMOS, the crystal plane and crystal orientation of the channel should be chosen reasonably. At present, there is a theoretical sort model for the inversion layer mobility of Si PMOS channel at 1.5 GPa stress according to the crystal plane and crystal orientation.However, in the actual manufact...
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