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Transport Studies on GaAs/AlGaAs Two-Dimensional Electron Systems Modulated by Triangular Array of Antidots

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【作者】 杨楚宏郑树玉樊洁景秀年姬忠庆刘广同杨昌黎吕力

【Author】 Chu-Hong Yang;Shu-Yu Zheng;Jie Fan;Xiu-Nian Jing;Zhong-Qing Ji;Guang-Tong Liu;Chang-Li Yang;Li Lu;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics,Chinese Academy of Sciences;University of Chinese Academy of Sciences;Collaborative Innovation Center of Quantum Matter;

【机构】 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics,Chinese Academy of SciencesUniversity of Chinese Academy of SciencesCollaborative Innovation Center of Quantum Matter

【摘要】 Triangular antidot lattices of various periods and aspect ratios are fabricated on high mobility GaAs/AlGaAs two-dimensional electron systems(2DESs),and are characterized by magneto-transport measurements at low temperatures down to 300 mK. Commensurability peaks are generally observed in the magneto-resistivity ρxx,and remarkable similarity between dρxy/dB and ρxx is found. In samples of relatively large aspect ratio d/a, the Aharonov-Bohm-type oscillations are clearly observed in both ρxx and ρxy, as well as the quenching of the Hall resistivity ρxy in the vicinity of B = 0. These observations evince the good quality of our samples, and attest to the adequate preparation for fabricating antidot lattices of a reduced period to realize artificial graphene from GaAs/AlGaAs 2DESs.

【Abstract】 Triangular antidot lattices of various periods and aspect ratios are fabricated on high mobility GaAs/AlGaAs two-dimensional electron systems(2DESs),and are characterized by magneto-transport measurements at low temperatures down to 300 mK. Commensurability peaks are generally observed in the magneto-resistivity ρxx,and remarkable similarity between dρxy/dB and ρxx is found. In samples of relatively large aspect ratio d/a, the Aharonov-Bohm-type oscillations are clearly observed in both ρxx and ρxy, as well as the quenching of the Hall resistivity ρxy in the vicinity of B = 0. These observations evince the good quality of our samples, and attest to the adequate preparation for fabricating antidot lattices of a reduced period to realize artificial graphene from GaAs/AlGaAs 2DESs.

【基金】 Supported by the National Basic Research Program of China under Grant Nos 2015CB921101 and 2014CB920904;the Strategic Priority Research Program B of Chinese Academy of Sciences under Grant No XDB07010200
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2018年07期
  • 【分类号】TB30
  • 【下载频次】26
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