Growth of β-Ga₂O₃ Films on Sapphire by Hydride Vapor Phase Epitaxy

【摘要】 Two-inch Ga₂O₃ films with（ˉ201）-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga₂O₃ with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-Ga₂O₃ grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 e V.更多还原

【Abstract】 Two-inch Ga₂O₃ films with（ˉ201）-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga₂O₃ with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-Ga₂O₃ grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 e V.更多还原