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Improvement of Nickel-Stanogermanide Contact Properties by Platinum Interlayer

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【作者】 万伟俊任伟孟骁然平云霞魏星薛忠营俞文杰张苗狄增峰张波

【Author】 Wei-Jun Wan;Wei Ren;Xiao-Ran Meng;Yun-Xia Ping;Xing Wei;Zhong-Ying Xue;Wen-Jie Yu;Miao Zhang;Zeng-Feng Di;Bo Zhang;Physics Department, Materials Genome Institute, and International Centre for Quantum and Molecular Structures,Shanghai University;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences;School of Mathematics, Physics and Statistics, Shanghai University of Engineering Science;

【机构】 Physics Department, Materials Genome Institute, and International Centre for Quantum and Molecular Structures,Shanghai UniversityState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesSchool of Mathematics, Physics and Statistics, Shanghai University of Engineering Science

【摘要】 We report an effective method to improve the formation of nickel stanogermanide(Ni Ge Sn) by the incorporation of a platinum(Pt) interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn thin films,which are characterized by means of sheet resistance, atomic force microscopy, scanning electron microscopy,cross-section transmission electron microscopy, and energy dispersive x-ray spectroscopy. These results show that the presence of Pt increases the smoothness and uniform morphology of Ni Ge Sn films.

【Abstract】 We report an effective method to improve the formation of nickel stanogermanide(Ni Ge Sn) by the incorporation of a platinum(Pt) interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn thin films,which are characterized by means of sheet resistance, atomic force microscopy, scanning electron microscopy,cross-section transmission electron microscopy, and energy dispersive x-ray spectroscopy. These results show that the presence of Pt increases the smoothness and uniform morphology of Ni Ge Sn films.

【基金】 Supported by the National Natural Science Foundation of China under Grant Nos 51672171 and 61604094;the Natural Science Foundation of Shanghai under Grant No 14ZR1418300;the National Key Basic Research Program of China under Grant No 2015CB921600;the Eastern Scholar Program from the Shanghai Municipal Education Commission;the Fok Ying Tung Education Foundation
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2018年05期
  • 【分类号】TN304
  • 【下载频次】26
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