节点文献

Metastable Electron Traps in Modified Silicon-on-Insulator Wafer

推荐 CAJ下载
PDF下载
不支持迅雷等下载工具，请取消加速工具后下载。

【Author】 Li-Hua Dai;Da-Wei Bi;Zheng-Xuan Zhang;Xin Xie;Zhi-Yuan Hu;Hui-Xiang Huang;Shi-Chang Zou;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences;University of Chinese Academy of Sciences;Information Engineering College, Jimei University;

【机构】 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences； University of Chinese Academy of Sciences； Information Engineering College, Jimei University；

【摘要】 We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator(SOI) wafers under different Si ion implantation conditions. It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device. It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.更多还原

【Abstract】 We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator(SOI) wafers under different Si ion implantation conditions. It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device. It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.更多还原

【关键词】 implantation； Insulator； metastable； capture； Electron； reasonably； buried； wafer； Wafer； transistor；

【基金】 Supported by the National Natural Science Foundation of China under Grant No 61504047;the Fujian Provincial Department of Science and Technology under Grant No 2016J05159

【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2018年05期

【分类号】TN304.12
【下载频次】29

知网节下载

节点文献中：

本文链接的文献网络图示:

本文的引文网络

节点文献