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A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

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【作者】 白占斌刘翔凯连震张康康王广厚史夙飞皮孝东宋凤麒

【Author】 Zhanbin Bai;Xiangkai Liu;Zhen Lian;Kangkang Zhang;Guanghou Wang;Su-Fei Shi;Xiaodong Pi;Fengqi Song;National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University;State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University;Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute;

【机构】 National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityState Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang UniversityDepartment of Chemical and Biological Engineering, Rensselaer Polytechnic Institute

【摘要】 We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is determined to be a Si170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300 meV, which is a result of the large capacitance of a small silicon quantum dot(~1.8 nm). This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10 meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.

【Abstract】 We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is determined to be a Si170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300 meV, which is a result of the large capacitance of a small silicon quantum dot(~1.8 nm). This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10 meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.

【基金】 Supported by the National Key Research and Development Program of China under Grant No 2017YFA0303200;the National Natural Science Foundation of China under Grant Nos U1732273,U1732159,91421109,91622115,11522432,11574217 and 61774133;the Natural Science Foundation of Jiangsu Province under Grant No BK20160659
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2018年03期
  • 【分类号】TN32
  • 【被引频次】1
  • 【下载频次】39
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