【摘要】 以氟化石墨为原料,通过改进的Hummers法制备出氟化石墨烯,通过XRD、FTIR、SEM、TEM、TG和UV-vis对氟化石墨烯和氟化石墨进行表征,结果表明:通过改进的Hummers法制备的氟化石墨烯为含氧氟化石墨烯,氟化石墨烯层数为5层;与氟化石墨相比,晶面间距由0.34 nm增加到0.62 nm,在制备氟化石墨烯过程中引入的含氧官能团以C—O为主;含氧官能团的存在导致氟化石墨烯热稳定性能下降;以该种方法制备出的氟化石墨烯禁带宽度为2.99 eV,是具有一定带隙的半导体材料。更多还原

【Abstract】 Fluorinated graphene was prepared from graphite fluoride by modified Hummers method. The prepared fluorinated graphene and graphite fluoride were characterized using X-ray diffractometer(XRD), Fourier transformed infrared(FTIR), Scanning electron microscope(SEM), Transmission electron microscope(TEM), Thermo-gravimetry(TG) and Ultraviolet visible(UV-vis) measurements. The results show that the prepared fluorinated graphene contained oxygen and had five layers. The interplanar spacing of fluorinated graphene increased from 0.34 nm to 0.62 nm compared with that of graphite fluoride. The oxygen-containing functional group doped in the process of preparation of fluorinated graphene is mainly C—O. The presence of oxygen-containing functional groups led to a decrease in the thermal stability of fluorinated graphene. The band gap of fluorinated graphene prepared by this method is 2.99 eV. So the fluorinated graphene is a semiconducting material with a certain band gap.更多还原