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通过弱配位溶剂退火揭示钙钛矿薄膜生长机制(英文)
Reveal the growth mechanism in perovskite films via weakly coordinating solvent annealing
【摘要】 本研究在两步法沉积CH3NH3PbI3和一步法沉积CsPbI3薄膜过程中使用弱配位溶剂异丙醇(IPA)对钙钛矿及钙钛矿前驱体进行溶剂退火处理,从而揭示了钙钛矿薄膜的成核机理.同时研究了退火温度对两步法中PbI2前驱体进行溶剂退火处理时的作用.发现IPA溶剂退火工艺严重影响了PbI2和CH3NH3PbI3薄膜的晶粒尺寸、致密度、粗糙度和薄膜形貌.相同的弱配位溶剂退火工艺也被应用于制备全无机CsPbI3钙钛矿.通过溶剂退火可以得到具有均匀晶粒尺寸、连续致密的全无机CsPbI3薄膜.我们认为弱配位溶剂退火工艺可以通过有效地调控钙钛矿中间相中的残留溶剂量来影响钙钛矿成膜中的再结晶过程.通过IPA溶剂退火工艺,CH3NH3PbI3钙钛矿太阳能电池光电转换效率达到17.4%,而CsPbI3的光电转换效率达到了2.5%.
【Abstract】 In this study, we investigated the nucleation mechanism of perovskite films by employing isopropanol(IPA), a weakly coordinating solvent, to anneal both PbI2 and CH3 NH3 PbI3 in the sequential deposition and CsPbI3 in the one-step deposition. IPA solvent annealing(IPA SA) of PbI2 films was carried out at different temperatures. The grain size,compactness, roughness and morphology of PbI2 and CH3 NH3 PbI3 films were seriously affected by annealing methods. Similarly, weakly coordinating solvent annealing process was also employed to anneal all inorganic CsPbI3 perovskite in a one-step method. A continuous and dense CsPbI3 film with uniform grain size was obtained. We recognized that weakly coordinating solvent annealing for perovskite could regulate the dissolution-recrystallization process via controlling the volume of residual solvent in perovskite intermediate films. The power conversion efficiency(PCE) of conventional CH3 NH3 PbI3 perovskite solar cells(PSCs)reached 17.4% and that of CsPbI3 PSCs reached 2.5% based on this sequential IPA SA process.
【Key words】 perovskite solar cells; solvent annealing; weak coordinating solvent; recrystallization;
- 【文献出处】 Science China Materials ,中国科学:材料科学(英文版) , 编辑部邮箱 ,2018年12期
- 【分类号】TB383.2
- 【被引频次】7
- 【下载频次】143