【摘要】 AgGaGe₅Se₁₂、AgGaGeS₄非线性晶体在中远红外激光具有良好的应用前景。合成高纯多晶是制备可器件化单晶元件的关键。但S、Se易挥发、高温下饱和蒸气压高,易导致石英坩埚的爆炸,组分偏离化学计量比。为此,本文采用一种新型的高压辅助法合成出大尺寸高纯的多晶原料,解决了石英坩埚爆炸和组份偏离问题,并在此基础上进行了单晶的生长过程。多晶X射线粉末衍射测试结果与模拟图谱或者标准PDF卡片一致; X射线荧光光谱分析得到各元素百分含量非常接近化学计量比,AgGaGe₅Se₁₂中Ag、Ga、Ge、Se各占7. 86%、5. 08%、23. 80%、63. 26%,AgGaGeS₄中Ag、Ga、Ge、S各占28. 22%、18. 24%、19. 52%、34. 02%;单晶透过率测试得到AgGaGe₅Se₁₂、AgGaGeS₄透过率分别为60%、70%,证明此方法制备的AgGaGe₅Se₁₂、AgGaGeS₄晶体性能优良,展现了该方法在多晶合成的应用潜力。更多还原

【Abstract】 AgGaGe₅Se₁₂ and AgGaGeS₄ are the promising nonlinear crystals for mid-far infrared laser applications. The synthesis of high purity polycrystals is the key to the fabrication of single crystal devices. However,the volatile S and Se have high saturated vapor pressure at high temperature,which easily causes the explosion of quartz crucible and the component deviates from stoichiometric ratio. Large size and high purity polycrystalline were synthesized by high-pressure-assisted method,which solves the problem of quartz crucible explosion and component deviation. Meanwhile,the single crystal rods are grown. The results of XRD are consistent with the simulated or standard PDF card. XRF shows that the percentage of each element was very close to stoichiometry. Ag,Ga,Ge and Se is 7. 86%,5. 08%,23.80% and 63. 26% in AgGaGe₅Se₁₂,Ag,Ga,Ge and S is 28. 22%,18. 24%,19. 52% and 34. 02% in AgGaGeS₄. FTIR shows the transmission rates of AgGaGe₅Se₁₂ and AgGaGeS₄ are 60% and 70% respectively. The results show that the crystals prepared by this method are excellent and this method hasapplication potential in polycrystalline synthesis.更多还原