【摘要】 InSe是一种新兴的二维层状材料,具有多种优异的光学特性。随着层数的降低,带隙从近红外逐步变到可见(1.26 e V到2.11 e V),如此大的可调谐的带隙和高本征迁移率,让其在光电探测领域有着良好的应用前景。但是研究发现,InSe在空气中不稳定,易被氧化,很大的限制了其应用。而石墨烯具有极宽的光谱吸收范围和高电子迁移率,同时具有理论上97.7%的透光率。因此石墨烯-InSe复合体系能够充分将石墨烯优异的电子传输特性以及InSe突出的光学吸收特性结合起来,从而提升光电性能。本文首先利用干法转移制备了石墨烯和InSe的异质结构,然后通过阶段式退火处理调控了两者之间的相互作用,研究发现随着退火时间的加长,被石墨烯覆盖的InSe荧光强度逐渐降低,说明二者之间相互作用逐渐增强,InSe中更多的电子转移到石墨烯中,极大的提升其光电特性。该结果为异质结相互作用的调控以及光电性能的提升提供了非常好的途径。更多还原

【Abstract】 In Se,a newly developed two-dimensional layered material with a variety of excellent optical properties. As the number of layers decreases,the band gap gradually changes from near-infrared to visible region( from 1. 26 e V to 2. 11 e V). Such tunable bandgap and high intrinsic mobility make it promising in photoelectric detection. However,it has been found that In Se is not stable in the air and can be easily oxidized,which thus greatly limit its application. Graphene has a wide spectrum absorption range and high electron mobility,and has a 97. 7% transmittance in theory at the same time. Therefore,the graphene-In Se composite system can combine the excellent electron transport properties of graphene and the outstanding optical absorption characteristics of In Se, and thus enhance the photoelectric performance. In this paper,the graphene-In Se heterostructures were prepared by dry transfer and their interlayer coupling was subsequently modulated by staged post annealing treatment. With the increase of annealing time,the PL intensity of such heterostructures decreased gradually,indicating that their coupling gradually enhanced as well. More electrons in In Se transferred to graphene,which greatly improved their photoelectric properties. The results provide an effective way for the control of heterostructure interaction and the improvement of photoelectric properties.更多还原