【摘要】 采用低成本的气相辅助电沉积方法（vapor-assisted electro-deposition,VAED）成功制备了面积为15 cm²均匀致密的钙钛矿薄膜。首先通过电化学沉积制备PbO₂薄膜,然后与HI气体反应得到PbI₂薄膜,接下来再与HI和CH3NH2混合气体反应,得到CH₃NH₃PbI₃薄膜。实验发现:电化学沉积电压对PbO₂薄膜的表面形貌和微结构有重要影响;在PbO₂向PbI₂的转化过程中,随着反应时间的减小,PbI₂的结晶性逐渐增强,最佳反应时间为10 min;在钙钛矿的转化过程中,当HI/CH₃NH₂体积比为1∶2时可获得均匀致密、四方相的钙钛矿薄膜。本研究提供了一种低温制备大面积均匀CH₃NH₃PbI₃薄膜的方法,得到的CH₃NH₃PbI₃薄膜可望在光电器件中得到应用。更多还原

【Abstract】 A uniformly dense perovskite film with an area of 15 cm² was successfully prepared by low-cost vapor-assisted electro-deposition（ VAED）. Firstly,PbO₂ film was prepared by electro-deposition and then reacted with HI gas to obtain PbI₂ film,and then reacted with HI and CH3 NH2 mixed gas to obtain CH₃NH₃PbI₃ film. The experimental results show that the electro-deposition voltage had an important influence on the surface morphology and microstructure of PbO₂ films. During the conversion of PbO₂ to PbI₂,the crystallinity of PbI₂ gradually increased with the decrease of reaction time,and the optimum reaction time was 10 min; In the process of perovskite conversion,a uniform and compact perovskite film with cube phase can be obtained when the volume ratio of HI/CH₃NH₂ was 1 ∶ 2. This study provided a preparation method of large-area CH₃NH₃PbI₃ films in a low-temperature way, and the obtained CH₃NH₃PbI₃ thin films was expected to be used in optoelectronic devices.更多还原