The impact of Al₂O₃ back interface layer on low-temperature growth of ultrathin Cu（In,Ga）Se₂ solar cells

【摘要】 With reducing the absorber layer thickness and processing temperature,the recombination at the back interface is severe,which both can result in the decrease of open-circuit voltage and fill factor.In this paper,we prepare Al₂O₃ by atomic layer deposition（ALD）,and investigate the effect of its thickness on the performance of Cu（In,Ga）Se₂（CIGS）solar cell.The device recombination activation energy（E_A）is increased from 1.04 eV to 1.11 eV when the thickness of Al₂O₃ is varied from 0 nm to 1 nm,and the height of back barrier is decreased from 48.54 meV to 38.05 meV.An efficiency of 11.57%is achieved with 0.88-μm-thick CIGS absorber layer.更多还原

【Abstract】 With reducing the absorber layer thickness and processing temperature,the recombination at the back interface is severe,which both can result in the decrease of open-circuit voltage and fill factor.In this paper,we prepare Al₂O₃ by atomic layer deposition（ALD）,and investigate the effect of its thickness on the performance of Cu（In,Ga）Se₂（CIGS）solar cell.The device recombination activation energy（E_A）is increased from 1.04 eV to 1.11 eV when the thickness of Al₂O₃ is varied from 0 nm to 1 nm,and the height of back barrier is decreased from 48.54 meV to 38.05 meV.An efficiency of 11.57%is achieved with 0.88-μm-thick CIGS absorber layer.更多还原