【摘要】 为了改善LIGBT的关断特性,已有一种采用PMOS管来控制LIGBT阳极空穴注入的方法。在此基础上,提出了一种具有载流子存储效应的高速SOI-LIGBT结构。采用二维仿真软件MEDICI,对器件P-top区的剂量、载流子存储层的长度、掺杂浓度等参数进行优化设计。结果表明,SOI-LIGBT的击穿电压为553V,正向压降为1.73V。关断时,引入的PMOS管可以阻止LIGBT阳极向漂移区注入空穴,使器件的关断时间下降到13ns,相比传统结构下降了87.6%。更多还原

【Abstract】 In order to reduce the turn-off loss of LIGBT,a method to control the hole injection from the anode region by an additional PMOS had been reported.Based on that,a high speed SOI-LIGBT with a carrier storage layer was presented and analyzed.Some key parameters such as the dose of the P-top region,the length and doping concentration of the carrier storage layer were optimized by the two-dimensional TCAD simulator MEDICI.An optimized SOI-LIGBT with a breakdown voltage of 553 V and an on-state voltage of 1.73 V was obtained.Furthermore,due to the suppression of the hole injection during the turn-off process,the proposed SOI-LIGBT exhibited a high speed switching of 13 ns turn-off time,which was reduced by 87.6% compared with that of the conventional structures.更多还原