【摘要】 采用循环伏安、计时安培测试研究了在20 g/L Cu SO₄+70 g/L H₂SO₄酸性镀液中Cl^-存在对铜沉积还原过程以及Cl^-浓度对铜在压延铜箔基体上电结晶初期行为的影响。研究表明,加入Cl^-,铜沉积起始电位大致不变,并在较低偏压(-0.3^-0.1 V_SCE)下缩短铜结晶初期的形核弛豫时间,提高阴极还原电流;在较高的偏压(-0.6^-0.4 V_SCE)下,Cl^-则阻碍铜的结晶沉积。通过扫描电镜还观察了Cl^-浓度、偏压对铜镀层组织形貌特征的影响,探讨了Cl^-在铜电结晶过程中的作用机理。更多还原

【Abstract】 Influence of chloride ion on Cu deposition-reduction process as well as influence of chloride ion concentration on the initial electrodeposition behavior of copper on rolled copper foil in a 20 g/L Cu SO₄+70 g/L H₂SO₄solution were investigated by cyclic voltammetry and chronoamperometry.Results showed that an addition of chloride ion could seldom alter the initial potential of copper deposition,but shortened the nucleation relaxation time in the initial stage of copper crystallization and increased the cathode reduction current at a low bias voltage(-0.3^-0.1 V_SCE),while the existence of chloride ion at a high bias voltage(-0.6^-0.4 V_SCE)could impeded the process of copper crystallization.The effects of chlorine ion concentration and bias voltage on the morphology of copper coating were observed by scanning electron microscope.The mechanism of chlorine ion in the process of copper electrocrystallization was also discussed.更多还原