节点文献

Cl~-对铜在压延铜箔上的电结晶行为及其组织形貌的影响

Influences of Chlorine Ions on Electro-crystallization Behavior,Microstructure and Morphology of Copper on Rolled Copper Foil

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 朱思哲谭澄宇刘晨王芝秀

【Author】 ZHU Si-zhe;TAN Cheng-yu;LIU Chen;WANG Zhi-xiu;College of Materials Science and Engineering,Central South University;Jiangsu Key Laboratory of Materials Surface Science and Technology,Changzhou University;

【机构】 中南大学材料科学与工程学院常州大学省材料表面科学与技术重点实验室

【摘要】 采用循环伏安、计时安培测试研究了在20 g/L Cu SO4+70 g/L H2SO4酸性镀液中Cl-存在对铜沉积还原过程以及Cl-浓度对铜在压延铜箔基体上电结晶初期行为的影响。研究表明,加入Cl-,铜沉积起始电位大致不变,并在较低偏压(-0.3-0.1 VSCE)下缩短铜结晶初期的形核弛豫时间,提高阴极还原电流;在较高的偏压(-0.6-0.4 VSCE)下,Cl-则阻碍铜的结晶沉积。通过扫描电镜还观察了Cl-浓度、偏压对铜镀层组织形貌特征的影响,探讨了Cl-在铜电结晶过程中的作用机理。

【Abstract】 Influence of chloride ion on Cu deposition-reduction process as well as influence of chloride ion concentration on the initial electrodeposition behavior of copper on rolled copper foil in a 20 g/L Cu SO4+70 g/L H2SO4solution were investigated by cyclic voltammetry and chronoamperometry.Results showed that an addition of chloride ion could seldom alter the initial potential of copper deposition,but shortened the nucleation relaxation time in the initial stage of copper crystallization and increased the cathode reduction current at a low bias voltage(-0.3-0.1 VSCE),while the existence of chloride ion at a high bias voltage(-0.6-0.4 VSCE)could impeded the process of copper crystallization.The effects of chlorine ion concentration and bias voltage on the morphology of copper coating were observed by scanning electron microscope.The mechanism of chlorine ion in the process of copper electrocrystallization was also discussed.

【基金】 江苏省材料表面科学与技术重点实验室开放课题(9W4548)
  • 【文献出处】 矿冶工程 ,Mining and Metallurgical Engineering , 编辑部邮箱 ,2018年02期
  • 【分类号】TQ153.14
  • 【被引频次】3
  • 【下载频次】181
节点文献中: 

本文链接的文献网络图示:

本文的引文网络