The high power 660 nm semiconductor laser is fabricated with non-absorbing window structure by Zn diffusion method.The photoluminescence wavelength of the active layer near the window region blue shifts by61 nm with the selective Zn diffusion in the window region of the chips,which effectively reduces the optical absorption of the cavity facets.The stripe width is 150μm and the cavity length is 1000μm.The chips are sintered with AuSn solder by p-side down onto the AlN heat sink.The packaged device shows the...
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