【摘要】 采用射频磁控溅射和离子注入技术,在石英玻璃衬底上制备了In-N共掺ZnO薄膜[ZnO:（In,N）].通过优化退火工艺,成功实现了可重复的p型ZnO:（In,N）薄膜,其空穴浓度约为10¹⁶cm^-3,并观察到薄膜随退火产生n→p→n电学转变现象.利用X射线衍射（XRD）、X射线光电子能谱（XPS）、拉曼光谱（Raman）和光致发光谱（PL）等测试手段,研究了掺杂杂质和本征缺陷对薄膜结构和p型导电的影响.发现相较于n型样品,p型ZnO中N相关受主缺陷浓度并不占优,但其本征施主缺陷锌间隙（Zn_i）含量较少,本征受主缺陷氧间隙（O_i）和锌空位(V_Zn)相对较多.表明薄膜中除N相关受主缺陷(N_O,In_Zn-nN_O)对p型导电有贡献之外,本征缺陷(V_Zn,O_i,Zn_i)对实现薄膜p型导电也有重要作用.因此,如何调控ZnO中本征缺陷是实现其p型转变以及获得稳定p-ZnO薄膜的重要手段.更多还原

【Abstract】 Indium and nitrogen co-doped ZnO thin films [ZnO:（In,N）] were prepared on quartz glass substrate by radio frequency magnetron sputtering combined with ion implantation technique. By optimizing the annealing temperature, a repeatable p-type ZnO:（In,N） thin film with the hole concentration about 10¹⁶ cm^-3 was successfully achieved. Using the Hall effect measurements, the n→p→n electrical transition phenomenon of the films with annealing temperature was observed.Then the effects of doped impurities and intrinsic defects on the structure and p-type conductivity of the films were investigated by X-ray diffraction（XRD）, X-ray photoelectron spectroscopy（XPS）, Raman spectroscopy and photoluminescence（PL） spectroscopy. It was found that the difference of N-related acceptor defects concentration between p-type and n-type ZnO is not prominent. Nevertheless, the content of intrinsic zinc interstitial（Zn_i） donor defects in p-type ZnO were less than that of n-type one, the intrinsic oxygen interstitial（O_i） and zinc vacancy(V_Zn)acceptor defects were relatively abundant. The conclusion can be drawn that besides the N-related acceptor defects(N_O,In_Zn-nN_O), the intrinsic defects(V_Zn, O_i, Zn_i) in the film also play a crucial role in realizing the p-type conductivity.Therefore, how to control the intrinsic defects in ZnO is an important means to realize the p-type transition and to improve p-type conductivity stability of ZnO thin film.更多还原