A short wavelength red light 640 nm high power laser diode has been designed and fabricated.AlGaInP epitaxial layers of the laser diodes are grown by metal organic chemical vapor deposition.The cladding layers are AlInP with low refractive index. The active layer is tensile strained GaInP/AlGaInP quantum well. The photoluminescence spectrum of the active layer shows two splitting peaks locate at 627 nm and 616 nm,which correspond to the transitions from electrons to light holes and heavy holes,respectively....
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