【摘要】 为了得到较低的接触电阻,研究了帽层未掺杂的InAs/AlSb异质结的Pd/Ti/Pt/Au合金化欧姆接触.利用传输线模型(TLM)测量了接触电阻Rc.在最佳的快速热退火条件为275℃和20s时,InAs/AlSb异质结的Pd/Ti/Pt/Au接触电阻值为0.128Ω·mm.TEM观察发现经过快速热退火后Pd已经扩散到半导体中有利于高质量欧姆接触的形成.研究表明经过Pd/Ti/Pt/Au合金化欧姆接触后Rc有明显减小,适用于InAs/AlSb异质结的应用.更多还原

【Abstract】 In order to achieve lowcontact resistances of InAs/AlSb heterostructures with the undoped In As cap layer,Pd/Ti/Pt/Au alloyed ohmic contact has been investigated.The contact resistance Rcis evaluated by using transmission-line-model(TLM) measurements.A minimum of 0.128 Ω·mm has been obtained by using the optimal rapid thermal annealing(RTA) with the condition at temperature of 275 ℃ and annealing time of 20 s.The measurement from transmission electron microscopy(TEM) demonstrates that the Pd atoms diffuses into the semiconductor,which is beneficial to the formation of a high-quality ohmic contact during the rapid thermal annealing.This study shows that the contact resistance Rcis reduced significantly after Pd/Ti/Pt/Au alloyed ohmic contact,which is suitable for its application in InAs/AlSb heterostructures.更多还原