Chemical mechanical polishing( CMP),now regarded as the only method to obtain whole-wafer planarization and super-smooth surface without sub-surface defects,is usually employed as the final processing method for silicon carbide( SiC) wafer,but the processing efficiency of conventional SiC-CMP is too low to fulfill the current requirement. Aiming at surface quality and material removal rate( MRR) of polished single crystal SiC wafer,the current state of SiC-CMP research is discussed and categorized by CMP us...
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