【摘要】 采用脉冲激光沉积法在Si衬底上生长出厚度为400nm的一系列ZnS薄膜,进行原位退火处理,获得单晶结构的闪锌矿型ZnS薄膜。首次报道了采用原位退火处理后获得单晶ZnS薄膜为立方结构的闪锌矿且薄膜沿(111)晶面择优生长,同时研究了其结晶质量与退火工艺之间的关系。结果显示随着退火温度的升高,薄膜的平均晶粒尺寸由200℃的13.357nm增长到400℃的27.232nm,另外薄膜的平均粗糙度由2.05nm下降达到1.14nm。采用脉冲激光沉积法制备的ZnS薄膜在400℃退火后表现出极好的单晶择优取向生长以及良好的表面平整度,为研究单晶ZnS薄膜提供一种实验解决思路。更多还原

【Abstract】 A series of ZnS thin films with a thickness of 400 nm were grown on Si substrate by pulsed laser deposition,and an in-situ annealing treatment was performed to obtain a single-crystal zinc blende ZnS thin film.It was reported for the first time that the single-crystal ZnS film with a cubic structure of sphalerite was obtained after in-situ annealing treatment,and the film was preferentially grown along the(111)crystal plane.The relationship between the crystal quality and the annealing process was also studied.The results show that as the annealing temperature increased,the average grain size of the film increased from 13.357 nm at 200 ℃ to27.232 nm at 400℃,while the average roughness of the film decreased from 2.05 to 1.14 nm.The ZnS film prepared by pulsed laser deposition showed excellent single crystal orientation growth and good surface flatness after annealing at 400℃,which provided an experimental solution for the study of single-crystal ZnS film.更多还原