【摘要】 提出了一种基于电荷收集测试技术的离子有效LET值测量方法.首先对半导体器件内收集电荷量与入射离子有效LET值之间的关系进行了分析,根据二者之间的关系提出通过测量电荷收集量从而测量离子有效LET值的方法;然后建立了半导体器件电荷收集测试系统,利用PN结和SRAM对测量方法进行了验证;最后成功利用该方法解释了以往单粒子效应实验中出现的数据异常.更多还原

【Abstract】 An effective LET of incident ions measurement method based on charge collection test technique is proposed. Firstly,the relationship between effective LET and amount of collected charge caused by incident ions in semiconductor devices analyzed,and according to the relationship the effective LET measurement method is raised. Then a semiconductor device charge collection test system is established and the effective LET test method is verified utilizing PN junction and SRAM. Finally,the effective LET in a semiconductor device that has abnormal Single Event Upset cross-section data is measured and find the reason for the abnormal data.更多还原