利用脉冲激光沉积技术在Sr Ti O_3表面导电层上方制备非晶Hf O_2栅介质薄膜,通过磁控溅射技术在非晶Hf O_2栅介质薄膜上方制备直径为100μm的圆形Pt电极,研究了变温条件下Pt/Hf O_2/Sr Ti O_3的漏电流I-V特性,分析了非晶Hf O_2栅介质层的漏电机制,如空间电荷限制电流机制、Fowler-Nordheim导电机制、Pool-Frenkel发射机制、肖特基发射机制。研究结果表明在低压段(<0.18 V)为欧姆导电;在高压段(>0.5 V)为Pool-Frenkel发射机制。
【英文摘要】
The amorphous HfO_2 gate dielectric film was coated on Sr TiO_3 surface conductive layer by pulsed laser deposition technique. The circular Pt electrode was prepared on the amorphous HfO_2 gate dielectric film by magnetron sputtering technology and the diameter of Pt electrode is 100 μm. The I-V characteristics of Pt/HfO_2/Sr TiO_3 were researched at different temperatures. The emphasis was on the mechanism of leakage current of amorphous HfO_2 gate dielectric film,such as space charge limiting current mech...
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