【摘要】 禁带宽度2.0~2.2 eV的AlGaInP太阳电池是制备五至六结叠层太阳电池必需的一结子电池,但目前高质量高Al组分的AlGaInP材料制备仍存在不小的挑战。采用金属有机化学气相沉积(MOCVD)设备制备了禁带宽度2.1~2.2 eV的AlGaInP太阳电池,研究了外延生长温度、表面活性剂等外延和结构参数对AlGaInP材料和电池性能的影响。通过优化外延生长温度和掺入表面活性剂,获得了在AM0光谱下开路电压达到1.58 V、光电转换效率为12.48%的AlGaInP单结太阳电池。更多还原

【Abstract】 AlGaInP quaternary alloy with high bandgap up to 2.0~2.2 eV is of great importance to the development of III-V solar cells with five or six junctions. However, epitaxy of the high-quality AlGaInP materials with large bandgap energies remains difficult. AlGaInP solar cells with bandgaps of 2.1~2.2 eV were grown by metalorganic chemical vapor deposition(MOCVD). The conditions were explored for the MOCVD growth of AlGaInP and the effects of the emitter thickness and surfactant on cell performance were studied. By means of optimizing the growth temperature and incorporation of surfactant, AlGaInP solar cells with Voc=1.58 V and η=12.48% were obtained.更多还原