【摘要】 采用超窄间隙介质阻挡电离放电方法将氧离解、电离、电离离解成低温氧等离子体,其中O^-和O₂（a¹Δg）等活性粒子在电场中反应生成高浓度臭氧O₃,臭氧浓度达到286 mg/L。臭氧产生设备输出高浓度臭氧输送给气液溶解混合装置,将高浓度臭氧强激励溶解于超净水中形成高浓度臭氧超净水,仅用3 min其浓度达到54.6 mg/L。所形成高浓度超净臭氧水将把硅片表面颗粒物、金属离子、粘附有机物、自然氧化膜等消除掉。解决硅片表面存在的质量技术问题。更多还原

【Abstract】 Ultra-narrow gap dielectric barrier ionization discharge method is used to dissociate,ionize and dissociative ionize oxygen into low-temperature oxygen plasma. Among them,reactive species such as O^-and O₂（a¹Δg） et al. react in electric field to form high concentration ozone O₃,the ozone concentration reach to 286 mg/L. High-concentration ozone output from ozone production equipment was transported to gas-liquid dissolving and mixing device,which could strongly excite and dissolve the high-concentration ozone into ultrapure water to form high-concentrated ozone ultrapure water,whose concentration achieved 54.6 mg/L within just 3 minutes. And the high-concentrated ozone ultrapure water could eliminate particles,metal ions,adhering organic matter,natural oxide film et al.existed on the surface of the silicon wafer. It will solve the quality technical problems existed on the surface of the silicon wafer.更多还原