【摘要】 以单丁基三氯化锡为Sn源,氟化铵为F源,甲醇为溶剂,采用超声雾化-气溶胶辅助气相化学沉积方法制备了均匀的FTO（SnO₂:F）透明导电薄膜。运用X射线衍射、场发射扫描电子显微镜、原子力显微镜、透射电子显微镜、霍尔效应测试仪等方法研究了镀膜时间对FTO薄膜微观结构和光电性能的影响规律。结果表明,薄膜物相为（200）晶面择优生长的金红石相Sn O2;随镀膜时间增加,薄膜表面颗粒粗化,厚度近似呈线性增加;镀膜时间每延长2 min,可见光区主波长（550 nm）透过率下降约10%,中远红外光区平均反射率先增大后减小,电阻率先减小后增大。在本文实验条件下,薄膜厚度可从约250 nm增加至约2 200 nm,电阻率在2.89×10-4⁶.69×10-4Ω·cm之间,依据中远红外反射光谱计算半球辐射率在0.21⁰.40之间,为进一步的性能优化提供了实验基础。更多还原

【Abstract】 In the present work,a homogeneous and dense FTO thin film has been deposited on glass substrates by using aerosol-assisted chemical vapor deposition,where butyltin trichloride,ammonium fluoride and methanol server as Sn source,F source and solvent. The structural,optical and electrical properties of the thin films were studied by X-ray diffraction,scanning electron microscopy,transmission electron microscopy,atomic force microscope,UV-Vis spectrophotometer and infrared spectroscopy,etc. The results show that the main phase of the film is cassiterite with the preferential( 200) plane upon increased deposition times. The transmittance of the visible region decreases by about 10%,and the reflectivity of the middle-far infrared region increases initially and subsequently decreases with the film thickness. The thickness of films can be increased from about 250 nm to about 2 200 nm,and resistivity decreases initially and then increases from 2. 89 × 10-4Ω·cm to 6. 69 × 10-4Ω·cm,leading the calculated hemisphere emittance of the film to be about 0. 21. The results show that the FTO films have the potential for high quality Low-E coatings.更多还原